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1 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features and performance ? 34 dbm midband pout ? 25 db nominal gain ? 7 db typical input return loss ? 12 db typical output return loss ? built-in directional power detector with reference ? 0.25m phemt technology ? bias conditions: 7v, 640ma ? chip dimensions: 2.03 x 1.39 x 0.10 mm (0.080 x 0.055 x 0.004 inches) preliminary measured performance bias conditions: vd=7v id=640ma primary applications ? vsat ? point-to-point 13 - 17 ghz 2.5 watt, 25db power amplifier datasheet subject to change without notice
2 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings symbol parameter 1 / value notes v + positive supply voltage 8 v 2 / v - negative supply voltage range -5v to 0v i + positive supply current (quiescent) 1300 ma 2 / | i g | gate supply current 18 ma p in input continuous wave power 24 dbm 2 / p d power dissipation 10.5 w 2 / 3 / t ch operating channel temperature 200 0 c 4 / 5 / mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / when operated at this bias condition with a base plate temperature of 70 c, the median life is 2.3e4. 4 / these ratings apply to each individual fet. 5 / junction operating tem perature will directly affect t he device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. table ii dc probe test (ta = 25 c, nominal) limits notes symbol min max units 1/ i dss 80 381 ma 1/ g m 175 425 ms 2/ |v p | 0.5 1.5 v 2/ |v bvgs | 83 0 v 2/ |v bvgd | 13 30 v 1/ measurements are performed on a 800 m fet. 2/ v p , v bvgd , and v bvgs are negative.
3 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii rf characterization table (t a = 25 c, nominal) (vd = 7v, id = 640ma 5%) limits symbol parameter test condition typ units gain small signal gain f = 13 ? 17 ghz 25 db irl input return loss f = 13 ? 17 ghz 7 db orl output return loss f = 13 ? 17 ghz 12 db pwr output power @ pin = +15 dbm f = 13 ? 17 ghz 34 dbm note: table iii lists the rf characteristics of typical devices as determined by fixtured measurements.
4 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv thermal information parameter test condition t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside) v d = 7v i d = 640ma p d = 4.48w 125.7 12.44 8.9e+6 note: assumes eutectic attach using 1.5mil 80/20 ausn mounted to a 20mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com typical fixtured performance
6 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com typical fixtured performance
7 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com typical fixtured performance
8 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com typical fixtured performance
9 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing 1 2 3 4 5 6 7 8 0.000 (0.000) 0.097 (0.004) 0.695 (0.027) 1.293 (0.051) 0.106 (0.004) 0.698 (0.027) 1.283 (0.051) 0.000 (0.000) 0.095 (0.004) 0.494 (0.019) 0.771 (0.030) 1.935 (0.076) 2.030 (0.080) 0.374 (0.015) 0.849 (0.033) 1.820 (0.072) 1.390 (0.055) units: millimeters (in ches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) gnd is backside of mmic bond pad #1 (rf input) 0.100 x 0.200 (0.004 x 0.008) bond pad #2 (vref) 0.100 x 0.100 (0.004 x 0.004) bond pad #3 (vd3) 0.100 x 0.100 (0.004 x 0.004) bond pad #4 (vd4) 0.200 x 0.125 (0.008 x 0.005) bond pad #5 (rf output) 0.100 x 0.200 (0.004 x 0.008) bond pad #6 (vdet) 0.100 x 0.100 (0.004 x 0.004) bond pad #7 (vg4) 0.100 x 0.100 (0.004 x 0.004) bond pad #8 (vg3) 0.100 x 0.100 (0.004 x 0.004)
10 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com power detector 40k 40k +5v vdet vref 50 rf out dut 5pf mmic external
11 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 100pf vg input tfn output tfn 100pf vd off chip r=10 off chip c=0.1 f off chip r=10 off chip c=0.1 f
12 TGA2505 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c. assembly process notes

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